To develop a singulation process for GaN wafers that consistently provides high quality and yields.
Integra evaluated the quality of die singulation of mechanical dicing versus scribe and break. A 120µm thick 4" GaN wafer was used for the evaluation.
- Mechanical dicing exhibited superior topside and backside quality compared to scribe and break.
- The mechanical dicing cut was very clean on the topside of the die with none of the chipping issues that one might normally expect from a hard III-V material.
- Backside quality from mechanical dicing was acceptable per Mil-Std specifications.
- Scribe and break demonstrated inferior topside quality compared to mechanical dicing due to the inability to maintain consistent and sufficient force during scribing of the GaN material.
- Backside quality was also substandard compared to mechanical dicing due to the excessive force required to break and separate the hard III-V material.
As a result of this evaluation, Integra was able to develop and qualify a high-quality production process for singulating GaN wafers using mechanical dicing.
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